The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 25, 2017
Filed:
Mar. 10, 2015
Sharp Kabushiki Kaisha, Sakai, Osaka, JP;
SHARP KABUSHIKI KAISHA, Sakai, JP;
Abstract
A semiconductor device includes a thin film transistor (), the thin film transistor () including: a substrate (); a gate electrode () provided on the substrate (); a gate dielectric layer () formed on the gate electrode (); an island-shaped oxide semiconductor layer () formed on the gate dielectric layer (); a protective layer () provided so as to cover an upper face () and an entire side face () of the oxide semiconductor layer (), the protective layer () having a single opening () through which the upper face () of the oxide semiconductor layer () is only partially exposed; and a source electrode () and a drain electrode () which are in contact with the oxide semiconductor layer () within the single opening ().