The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 25, 2017
Filed:
Dec. 22, 2014
Applicant:
Soitec, Bernin, FR;
Inventor:
Christiaan J. Werkhoven, Gilbert, AZ (US);
Assignee:
Soitec, Bernin, FR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/20 (2006.01); H01L 21/762 (2006.01); H01L 21/265 (2006.01); H01L 29/205 (2006.01);
U.S. Cl.
CPC ...
H01L 29/2003 (2013.01); H01L 21/2654 (2013.01); H01L 21/76251 (2013.01); H01L 21/76254 (2013.01); H01L 29/20 (2013.01); H01L 29/205 (2013.01);
Abstract
Methods of fabricating semiconductor structures include the formation of molybdenum nitride at one or more surfaces of a substrate comprising molybdenum, and providing a layer of III-V semiconductor material, such as GaN, over the substrate. Semiconductor structures formed by methods described herein may include a substrate comprising molybdenum, molybdenum nitride at one or more surfaces of the substrate, and a layer of GaN bonded to the molybdenum nitride.
Quick Actions:
Werkhoven, Christiaan. (2017). Methods of forming semiconductor structures including iii-v semiconductor material using substrates comprising molybdenum, and structures formed by such methods (U.S. Patent No. 9716148). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9716148
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