The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 25, 2017
Filed:
Jun. 01, 2015
Canon Kabushiki Kaisha, Tokyo, JP;
Masatsugu Itahashi, Yokohama, JP;
Nobuaki Kakinuma, Tokyo, JP;
Mineo Shimotsusa, Machida, JP;
Masato Fujita, Kitakyushu, JP;
Yusuke Onuki, Fujisawa, JP;
Takumi Ogino, Koganei, JP;
Keita Torii, Yamato, JP;
CANON KABUSHIKI KAISHA, Tokyo, JP;
Abstract
A method of manufacturing a solid-state image sensor includes forming a first element isolation and a first active region of a pixel area, and a second isolation and a second active region of a peripheral circuit area, forming a gate electrode film covering the first element isolation, the first active region, the second element isolation and the second active region, implanting an n-type impurity selectively into at least a part of the gate electrode film corresponding to the pixel area, and forming, after the implanting of the n-type impurity, a first gate electrode of the pixel area and a second gate electrode of the peripheral circuit area by patterning the gate electrode film. The part of the gate electrode film includes a portion located above a boundary between the first element isolation and the first active region.