The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 25, 2017

Filed:

Jun. 24, 2015
Applicant:

Softkinetic Sensors NV, Brussels, BE;

Inventors:

Kyriaki Korina Fotopoulou, Brussels, BE;

Ward Van Der Tempel, Keerbergen, BE;

Assignee:

SOFTKINETIC SENSORS NV, Brussels, BE;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); G01S 7/486 (2006.01); H01L 31/11 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1461 (2013.01); G01S 7/4863 (2013.01); H01L 27/1464 (2013.01); H01L 31/11 (2013.01);
Abstract

The invention relates to a majority current assisted detector device, comprising a semiconductor layer of a first conductivity type epitaxially grown on a semiconductor substrate, at least two control regions of the first conductivity type, at least two detection regions of a second conductivity type opposite to the first conductivity type, and a source for generating a majority carrier current in the semiconductor layer between the two control regions, the majority current being associated with an electrical field. The detection regions surround the control regions, thereby forming at least two taps. The device is configured for backside illumination and further comprises a well of the first conductivity type between the two detection regions for insulating the detection regions. The well comprises pixel circuitry elements.


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