The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 25, 2017
Filed:
Jan. 05, 2016
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Jong Won Kim, Hwaseong-si, KR;
Seung Hyun Lim, Seoul, KR;
Chang Seok Kang, Seongnam-si, KR;
Young Woo Park, Seoul, KR;
Dae Hoon Bae, Seongnam-si, KR;
Dong Seog Eun, Seongnam-si, KR;
Woo Sung Lee, Yongin-si, KR;
Jae Duk Lee, Seongnam-si, KR;
Jae Woo Lim, Hwaseong-si, KR;
HanMei Choi, Seoul, KR;
Abstract
A memory device includes a plurality of channel regions that each extend in a direction perpendicular to an upper surface of a substrate, a plurality of gate electrode layers and a plurality of insulating layers stacked on the substrate adjacent the channel regions, each of the gate electrodes extending different lengths, and a plurality of dummy channel regions adjacent first ends of the plurality of gate electrode layers, wherein the substrate includes a substrate insulating layer formed below the plurality of dummy channel regions.