The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 25, 2017

Filed:

May. 12, 2014
Applicant:

Mitsubishi Electric Corporation, Tokyo, JP;

Inventors:

Hiroshi Kawashima, Tokyo, JP;

Ken Sakamoto, Tokyo, JP;

Taketoshi Shikano, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/495 (2006.01); H01L 21/50 (2006.01); H01L 23/00 (2006.01); H01L 21/56 (2006.01); H01L 23/433 (2006.01); H01L 23/31 (2006.01);
U.S. Cl.
CPC ...
H01L 24/49 (2013.01); H01L 21/565 (2013.01); H01L 23/4334 (2013.01); H01L 23/49537 (2013.01); H01L 23/49551 (2013.01); H01L 23/49562 (2013.01); H01L 23/49575 (2013.01); H01L 23/3107 (2013.01); H01L 24/45 (2013.01); H01L 2224/45124 (2013.01); H01L 2224/45144 (2013.01); H01L 2224/45147 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48137 (2013.01); H01L 2224/48257 (2013.01); H01L 2224/49171 (2013.01); H01L 2224/49505 (2013.01); H01L 2924/13055 (2013.01); H01L 2924/181 (2013.01); H01L 2924/1815 (2013.01);
Abstract

A power semiconductor element is fixed on a die pad of the lead frame. A metal plate is bonded to a lower surface of the die pad via an insulating film. The inner lead etc. are disposed in a cavity between a lower mold and an upper mold and are encapsulated with an encapsulation resin. The lower mold has a stepped portion provided in a bottom surface of the cavity below the inner lead. A height of an upper surface of the stepped portion is larger than a height of an upper surface of the power semiconductor element disposed in the cavity. When an encapsulation resin is injected into the cavity, a lower surface of the metal plate is in contact with the bottom surface of the cavity, and the encapsulation resin flows downward from above the stepped portion toward the upper surface of the power semiconductor element.


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