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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9716043 B1

PDFFull Text
Date of Patent:
Jul. 25, 2017

Filed:

Jun. 21, 2016

Wiring structure and method of forming the same, and semiconductor device including the wiring structure

Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Jin-Hyeung Park, Suwon-si, KR;

Yeon-Joo Kim, Yongin-si, KR;

In-Hwan Kim, Gyeongsan-si, KR;

Jun-Jung Kim, Suwon-si, KR;

Kyoung-Pil Park, Goyang-si, KR;

Jeong-Hoon Ahn, Yongin-si, KR;

Sang-Chul Lee, Suwon-si, KR;

Joon-Nyung Lee, Seoul, KR;

Hyo-Seon Lee, Yongin-si, KR;

Assignee:

Samsung Electronics Co., Ltd., Gyeonggi-do, KR;

Attorney:

Harness, Dickey & Pierce, P.L.C.

Primary Examiner:

Monica D Harrison

Int. Cl.
CPC ...
H01L 21/82 (2006.01); H01L 23/52 (2006.01); H01L 21/8234 (2006.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823475 (2013.01); H01L 21/76811 (2013.01); H01L 21/76813 (2013.01); H01L 21/76816 (2013.01); H01L 21/823431 (2013.01); H01L 23/528 (2013.01); H01L 23/5226 (2013.01); H01L 23/53223 (2013.01); H01L 23/53238 (2013.01); H01L 23/53266 (2013.01);
Abstract

In a method of forming a wiring structure, a first mask having a first opening including a first portion extending in a second direction and a second portion extending in a first direction is formed. A second mask including a second opening overlapping the first portion of the first opening and third openings each overlapping the second portion of the first opening is designed. The second mask is fabricated to include a fourth opening by enlarging the second opening. The fourth opening overlaps a boundary between the first and second portions of the first opening. An insulating interlayer is etched using the first and second masks to form first and second via holes corresponding to the fourth and third openings, and a trench corresponding to the first opening. First and second vias and a wiring are formed to fill the first and second via holes and the trench.

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