The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 25, 2017
Filed:
Jan. 06, 2015
Canon Kabushiki Kaisha, Tokyo, JP;
Masaaki Minowa, Kawasaki, JP;
Takayuki Sumida, Kawasaki, JP;
CANON KABUSHIKI KAISHA, Tokyo, JP;
Abstract
A method of manufacturing a semiconductor device, the method, comprising a first etching step of etching a substrate on which a silicon member and a compound member containing nitrogen and silicon are exposed, by using a first etching gas containing XeFand H, and a second etching step of etching the substrate by using a second etching gas containing XeF, wherein the second etching gas satisfies at least one of (i) a condition that the second etching gas is lower in a partial pressure of Hthan the first etching gas, and (ii) a condition that the second etching gas is smaller in a quantity of flow of Hthan the first etching gas.