The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 25, 2017
Filed:
Aug. 10, 2016
Applicant:
Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;
Inventor:
Zhongshan Hong, Shanghai, CN;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/52 (2006.01); H01L 21/033 (2006.01); H01L 21/311 (2006.01); H01L 21/02 (2006.01); H01L 21/768 (2006.01); H01L 21/3213 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0338 (2013.01); H01L 21/0217 (2013.01); H01L 21/0228 (2013.01); H01L 21/02115 (2013.01); H01L 21/02123 (2013.01); H01L 21/02126 (2013.01); H01L 21/02164 (2013.01); H01L 21/02167 (2013.01); H01L 21/0332 (2013.01); H01L 21/0335 (2013.01); H01L 21/0337 (2013.01); H01L 21/31144 (2013.01); H01L 21/76816 (2013.01); H01L 21/31116 (2013.01); H01L 21/32137 (2013.01);
Abstract
A multiple patterning method is provided. The multiple patterning method includes providing a substrate; and forming a sacrificial film on the substrate. The multiple patterning method also includes forming a first mask film on the sacrificial film; and forming a second mask film for subsequently forming a certain structure to protect the subsequently formed mask structures on the first mask film. Further, the multiple patterning method includes forming first mask structures and second mask structures by etching the second mask film, the first mask film, and the sacrificial film.