The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 25, 2017
Filed:
Dec. 11, 2015
Sharp Kabushiki Kaisha, Osaka-shi, Osaka, JP;
Hiroshi Matsukizono, Osaka, JP;
SHARP KABUSHIKI KAISHA, Sakai, JP;
Abstract
A semiconductor device () includes a thin-film transistor () including a gate electrode (), source and drain electrodes (), and an oxide semiconductor layer (), and a source bus line (). The source electrode, the source bus line and the drain electrode include a first metallic element and the oxide semiconductor layer includes a second metallic element. When viewed along a normal to its substrate, at least respective portions of the source electrode, the source bus line, and the drain electrode overlap with the oxide semiconductor layer. A low reflecting layer () which includes the first and second metallic elements and which has a lower reflectance to visible radiation than the source electrode has been formed between the source electrode and the oxide semiconductor layer, between the source bus line and the oxide semiconductor layer, and between the drain line and the oxide semiconductor layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile