The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 25, 2017
Filed:
Jul. 30, 2014
Applicant:
Daiwa Techno Systems Co., Ltd., Tokyo, JP;
Inventors:
Takeshi Shirato, Chiba, JP;
Yuuji Honda, Chiba, JP;
Hiroshi Sato, Tokyo, JP;
Masamichi Osawa, Tokyo, JP;
Assignee:
DAIWA TECHNO SYSTEMS CO., LTD., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/505 (2006.01); C23C 16/04 (2006.01); C23C 16/06 (2006.01); C23C 16/455 (2006.01); C23C 16/458 (2006.01); C23C 16/509 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
C23C 16/505 (2013.01); C23C 16/045 (2013.01); C23C 16/06 (2013.01); C23C 16/4587 (2013.01); C23C 16/45591 (2013.01); C23C 16/509 (2013.01); H01J 37/32082 (2013.01); H01J 37/32091 (2013.01); H01J 37/32623 (2013.01); H01J 37/32633 (2013.01); H01J 37/32697 (2013.01); H01J 37/32899 (2013.01); Y10T 428/12361 (2015.01);
Abstract
A film-forming method of an osmium film includes disposing a metal plate in a chamber; introducing OsOgas at a flow rate of 0.1 to 3 cc/min and an inert gas for maintaining discharge into the chamber while maintaining the pressure in the chamber to 13 to 40 Pa; and forming an osmium film on the surface of the metal plate by turning the gas in the chamber into plasma using radio frequency output power with the density of 0.25 to 2.0 W/cm.