The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 25, 2017

Filed:

Jun. 12, 2015
Applicant:

Saint-gobain Ceramics & Plastics, Inc., Worcester, MA (US);

Inventors:

Olivier Citti, Wellesley, MA (US);

Andrea L. Kazmierczak, Marlborough, MA (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
C04B 35/101 (2006.01); C03B 17/06 (2006.01); C04B 35/626 (2006.01); C04B 35/111 (2006.01);
U.S. Cl.
CPC ...
C03B 17/064 (2013.01); C04B 35/1015 (2013.01); C04B 35/111 (2013.01); C04B 35/62665 (2013.01); C04B 2235/3206 (2013.01); C04B 2235/3217 (2013.01); C04B 2235/3224 (2013.01); C04B 2235/3225 (2013.01); C04B 2235/3227 (2013.01); C04B 2235/3229 (2013.01); C04B 2235/3232 (2013.01); C04B 2235/3244 (2013.01); C04B 2235/3251 (2013.01); C04B 2235/3418 (2013.01); C04B 2235/3463 (2013.01); C04B 2235/5436 (2013.01); C04B 2235/5445 (2013.01); C04B 2235/6023 (2013.01); C04B 2235/6027 (2013.01); C04B 2235/72 (2013.01); C04B 2235/77 (2013.01); C04B 2235/782 (2013.01); C04B 2235/783 (2013.01); C04B 2235/786 (2013.01); C04B 2235/788 (2013.01); C04B 2235/95 (2013.01); Y02P 40/57 (2015.11);
Abstract

A refractory object can include at least 10 wt % AlO. In an embodiment, the refractory object can further include a dopant including an oxide of a rare earth element, Ta, Nb, Hf, or any combination thereof. In another embodiment, the refractory object may have a property such that the averaged grain size does not increase more than 500% during sintering, an aspect ratio less than approximately 4.0, a creep rate less than approximately 1.0×10μm/(μm×hr), or any combination thereof. In a particular embodiment, the refractory object can be in the form of a refractory block or a glass overflow forming block. The glass overflow forming block can be useful in forming an Al—Si—Mg glass sheet. In a particular embodiment, a layer including Mg—Al oxide can initially form along exposed surfaces of the glass overflow forming block when forming the Al—Si—Mg glass sheet.


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