The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 18, 2017
Filed:
Mar. 10, 2016
Applicant:
Peregrine Semiconductor Corporation, San Diego, CA (US);
Inventors:
Michael Conry, San Diego, CA (US);
Kevin Roberts, Rohnert Park, CA (US);
Edward Nicholas Comfoltey, San Diego, CA (US);
Assignee:
Peregrine Semiconductor Corporation, San Diego, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
H04B 1/44 (2006.01); H03K 17/693 (2006.01); H04B 1/48 (2006.01); H04B 1/38 (2015.01);
U.S. Cl.
CPC ...
H03K 17/693 (2013.01); H04B 1/44 (2013.01); H04B 1/48 (2013.01); H04B 2001/485 (2013.01);
Abstract
A FET-based RF switch architecture and method that provides for independent control of FETs within component branches of a switching circuit. With independent control of branch FETs, every RF FET in an inactive branch that is in an 'open' (capacitive) state can be shunted to RF ground and thus mitigate impedance mismatch effects. Providing a sufficiently low impedance to RF ground diminishes such negative effects and reduces the sensitivity of the switch circuit to non-matched impedances.