The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 18, 2017

Filed:

Feb. 06, 2015
Applicant:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Inventors:

Kazutaka Takagi, Kawasaki, JP;

Tomohito Oomori, Yokohama, JP;

Assignee:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03H 7/38 (2006.01); H03F 3/68 (2006.01); H03K 5/1252 (2006.01);
U.S. Cl.
CPC ...
H03K 5/1252 (2013.01); H01L 2224/49175 (2013.01);
Abstract

Certain embodiments provide a high frequency semiconductor device including a plurality of unit FETs, an input dividing/matching circuit, an output combining/matching circuit, and a low-frequency-oscillation-suppressing-circuit. The input dividing/matching circuit has an input end and a plurality of divided output ends connected to the unit FETs, and is symmetrical about a center axis of the input end. The output combining/matching circuit has an output end and a plurality of divided input ends connected to the unit FETs, and is symmetrical about a center axis of the output end. The low-frequency-oscillation-suppressing-circuit is connected to at least one of the input end of the input dividing/matching circuit and the output end of the output combining/matching circuit.


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