The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 18, 2017

Filed:

Jun. 08, 2016
Applicant:

Furukawa Electric Co., Ltd., Tokyo, JP;

Inventors:

Hideaki Hasegawa, Tokyo, JP;

Noriyuki Yokouchi, Tokyo, JP;

Taketsugu Sawamura, Tokyo, JP;

Satoshi Irino, Tokyo, JP;

Junji Yoshida, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/14 (2006.01); H01S 3/067 (2006.01); H01S 3/094 (2006.01); H01S 3/30 (2006.01); H01S 5/024 (2006.01); H01S 5/065 (2006.01); H01S 5/022 (2006.01);
U.S. Cl.
CPC ...
H01S 5/146 (2013.01); H01S 3/06754 (2013.01); H01S 3/094011 (2013.01); H01S 3/302 (2013.01); H01S 5/02415 (2013.01); H01S 5/0652 (2013.01); H01S 5/141 (2013.01); H01S 3/094096 (2013.01); H01S 5/02208 (2013.01); H01S 5/02248 (2013.01); H01S 5/142 (2013.01); H01S 2301/03 (2013.01);
Abstract

A method of designing a semiconductor laser device includes: controlling a distance between the output-side reflection unit and the second reflection unit and an effective optical feedback κ to the semiconductor laser element, the effective optical feedback κ defined by a below-presented formula (1) including a circulating time τ of the light in the semiconductor laser element, a reflectivity Rof the output-side reflection unit, and a reflectivity Rof the second reflection unit; selecting a semiconductor laser device in which an LFF period is equal to or smaller than 20 ns as a semiconductor laser device in which high speed switching occurs between an FBG mode and an FP mode; and using the selected semiconductor laser device as an semiconductor laser device oscillating in a coherent collapse mode.κ=(1/τ)×(1−)×()  (1)


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