The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 18, 2017

Filed:

Aug. 19, 2016
Applicant:

Electronics and Telecommunications Research Institute, Daejeon, KR;

Inventors:

Dong Hun Lee, Sejong-si, KR;

Sang Ho Park, Daejeon, KR;

Yong Soon Baek, Daejeon, KR;

Jang Uk Shin, Daejeon, KR;

Young Tak Han, Daejeon, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02B 6/12 (2006.01); H01S 5/22 (2006.01); H01S 5/026 (2006.01); H01S 5/00 (2006.01); H01S 5/343 (2006.01); G02F 1/017 (2006.01); G02B 6/14 (2006.01); G02B 6/122 (2006.01); G02F 1/015 (2006.01);
U.S. Cl.
CPC ...
H01S 5/026 (2013.01); G02B 6/12004 (2013.01); G02B 6/1228 (2013.01); G02B 6/14 (2013.01); G02F 1/01708 (2013.01); H01S 5/0064 (2013.01); H01S 5/0085 (2013.01); H01S 5/2223 (2013.01); H01S 5/343 (2013.01); G02F 2001/0157 (2013.01);
Abstract

Provided herein is a semiconductor optical device, including a waveguide including lattices buried therein and having a buried hetero (BH) structure formed in an optical oscillation region in which single mode light is oscillated, a waveguide having a deep ridge structure formed in an optical modulation region, and a passive waveguide formed in a mode transition region interposed between the optical oscillation region and the optical modulation region, formed as a connecting structure of the waveguide having the BH structure extending from the optical oscillation region and the waveguide having the deep ridge structure extending from the optical modulation region, and inducing evanescent optical coupling, wherein a width of the waveguide having the BH structure in the mode transition region is smaller than a width of the waveguide having the deep ridge structure in the optical modulation region.


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