The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 18, 2017

Filed:

Sep. 01, 2015
Applicant:

Fujifilm Corporation, Tokyo, JP;

Inventors:

Masaru Kinoshita, Kanagawa, JP;

Yoshihisa Usami, Kanagawa, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 51/00 (2006.01); H01L 51/05 (2006.01); H01L 51/50 (2006.01); H01L 27/32 (2006.01);
U.S. Cl.
CPC ...
H01L 51/0013 (2013.01); H01L 51/003 (2013.01); H01L 51/0031 (2013.01); H01L 51/0545 (2013.01); H01L 27/3244 (2013.01); H01L 51/5012 (2013.01);
Abstract

In the method for producing an organic semiconductor element having a semiconductor layer according to the present invention, an optical system for irradiating a laser beam with a wavelength of at least 4 μm and a donor substrate prepared by forming an organic semiconductor film on a surface of a supporting member having a laser beam transmittance of at least 50% are used; and the donor substrate and a substrate to be treated serving as a semiconductor element are opposite one another; the laser beam is irradiated from the supporting member side; the laser beam is scanned while modulating in accordance with the semiconductor layer to be formed; and the organic semiconductor film is transferred to the substrate to be treated so as to form the semiconductor layer.


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