The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 18, 2017

Filed:

Jul. 06, 2012
Applicants:

Ivar Tångring, Regensburg, DE;

Wolfgang Schmid, Regensburg, DE;

Inventors:

Ivar Tångring, Regensburg, DE;

Wolfgang Schmid, Regensburg, DE;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/62 (2010.01); H01L 33/14 (2010.01); H01L 33/20 (2010.01); H01L 33/38 (2010.01); H01L 33/40 (2010.01);
U.S. Cl.
CPC ...
H01L 33/62 (2013.01); H01L 33/145 (2013.01); H01L 33/20 (2013.01); H01L 33/38 (2013.01); H01L 33/405 (2013.01); H01L 2224/48463 (2013.01);
Abstract

An optoelectronic semiconductor chip includes a semiconductor layer sequence having at least one active layer. Furthermore, the semiconductor chip has a top-side contact structure on a radiation main side of the semiconductor layer sequence and an underside contact structure on an underside situated opposite to the radiation main side. Furthermore, the semiconductor chip includes at last two trenches that extend from the radiation main side towards the underside. As seen in a plan view of the radiation main side, the top-side contact structure and the underside contact structure are arranged in a manner spaced apart from one another. Likewise as seen in a plan view of the radiation main side, the trenches are located between the top-side contact structure and the underside contact structure.


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