The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 18, 2017
Filed:
Feb. 14, 2012
Simon Vassant, Paris, FR;
Fabrice Pardo, Vitry-sur-Seine, FR;
Jean-luc Pelouard, Paris, FR;
Jean-jacques Greffet, Verriéres le Buisson, FR;
Alexandre Archambault, Paris, FR;
François Marquier, Longjumeau, FR;
Simon Vassant, Paris, FR;
Fabrice Pardo, Vitry-sur-Seine, FR;
Jean-Luc Pelouard, Paris, FR;
Jean-Jacques Greffet, Verriéres le Buisson, FR;
Alexandre Archambault, Paris, FR;
François Marquier, Longjumeau, FR;
Abstract
According to one aspect, the present invention concerns a terahertz modulator () intended to be used in a given frequency band of use. The modulator comprises a semi-conductor polar crystal () presenting a Reststrahlen band overlapping said frequency band of use and presenting at least one interface with a dielectric medium, coupling means () allowing the resanant coupling of an interface phonon polariton (IPhP) supported by said interface and of an incident radiation () of pre-determined frequency lying in said frequency band of use and means of control () apt to modify the intensity of the coupling between said interface phonon polariton and said incident radiation () by modification of the dielectric function of the polar crystal in the Reststrahlen band of the polar crystal ().