IDiyas

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9711685 B1

PDFFull Text
Date of Patent:
Jul. 18, 2017

Filed:

Apr. 11, 2016

Sapphire substrate and method for manufacturing the same and nitride semiconductor light emitting element

Applicant:

Nichia Corporation, Anan-shi, Tokushima, JP;

Inventors:

Naoya Sako, Anan, JP;

Takashi Ohara, Anan, JP;

Yoshiki Inoue, Anan, JP;

Yuki Shibutani, Anan, JP;

Yoshihito Kawauchi, Komatsushima, JP;

Kazuyuki Takeichi, Komatsushima, JP;

Yasunori Nagahama, Naruto, JP;

Assignee:

NICHIA CORPORATION, Anan-Shi, JP;

Attorney:

Foley & Lardner LLP

Primary Examiner:

Nathan W Ha

Int. Cl.
CPC ...
H01L 33/32 (2010.01); H01L 33/22 (2010.01); C30B 25/18 (2006.01); C30B 29/20 (2006.01); C30B 29/40 (2006.01); C30B 33/08 (2006.01); C30B 33/10 (2006.01); C30B 33/12 (2006.01); H01L 21/308 (2006.01); H01L 21/02 (2006.01); H01L 33/24 (2010.01); H01L 33/00 (2010.01);
U.S. Cl.
CPC ...
H01L 33/22 (2013.01); C30B 25/183 (2013.01); C30B 25/186 (2013.01); C30B 29/20 (2013.01); C30B 29/403 (2013.01); C30B 29/406 (2013.01); C30B 33/08 (2013.01); C30B 33/10 (2013.01); C30B 33/12 (2013.01); H01L 21/02002 (2013.01); H01L 21/308 (2013.01); H01L 33/007 (2013.01); H01L 33/24 (2013.01); H01L 33/32 (2013.01); H01L 2933/0091 (2013.01);
Abstract

A sapphire substrate provided with a plurality of projections on a principal surface on which a nitride semiconductor is grown to form a nitride semiconductor light emitting element. The projections have a substantially triangular pyramidal-shape the projections having a plurality of side surfaces and a pointed top. The side surfaces have an inclination angle of between 53° and 59° from a bottom of the projections. The side surfaces are crystal-growth-suppressed surfaces on which a growth of the nitride semiconductor is suppressed relative to a portion of the principal surface located between adjacent projections. A bottom of the projections has a substantially triangular shape having three outwardly curved arc-shaped sides, and each of the side surfaces has a substantially triangular shape having vertexes located at the top of the projection and at both ends of a respective side of the bottom of the projection.

Find Patent Forward Citations

Loading…