The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 18, 2017
Filed:
Mar. 02, 2016
Toyoda Gosei Co., Ltd., Kiyosu-shi, JP;
Yoshiki Saito, Kiyosu, JP;
Misato Boyama, Kiyosu, JP;
TOYODA GOSEI CO., LTD., Kiyosu-Shi, Aichi-Ken, JP;
Abstract
There is provided a Group III nitride semiconductor light-emitting device in which electrons and holes are suppressed to be captured by threading dislocation, and a production method therefor. The light-emitting device comprises an n-type semiconductor layer, a light-emitting layer on the n-type semiconductor layer, a p-type semiconductor layer on the light-emitting layer. The light-emitting device has a plurality of pits extending from the n-type semiconductor layer to the p-type semiconductor layer. The n-type semiconductor layer includes an n-side electrostatic breakdown preventing layer. The n-side electrostatic breakdown preventing layer comprises an n-type GaN layer containing starting point of the pits, and an ud-GaN layer disposed adjacent to the n-type GaN layer and containing a part of the pits. At least one of the n-type GaN layer and the ud-GaN layer has an In-doped layer. The In composition ratio of the In-doped layer is more than 0 and not more than 0.0035.