The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 18, 2017

Filed:

Aug. 19, 2013
Applicant:

Lg Innotek Co., Ltd., Seoul, KR;

Inventors:

Young Hun Han, Seoul, KR;

Rak Jun Choi, Seoul, KR;

Jeong Tak Oh, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/12 (2010.01); H01L 33/06 (2010.01); H01L 33/32 (2010.01);
U.S. Cl.
CPC ...
H01L 33/12 (2013.01); H01L 33/06 (2013.01); H01L 33/32 (2013.01); H01L 2224/48091 (2013.01);
Abstract

The light emitting device includes a first conductive semiconductor layer; a second conductive semiconductor layer on the first conductive semiconductor layer; and an active layer between the first and second conductive semiconductor layers. The active layer includes a plurality of well layers and a plurality of barrier layers, wherein the well layers include a first well layer and a second well layer adjacent to the first well layer. The barrier layers include a first barrier layer disposed between the first and second well layers, and the first barrier layer includes a plurality of semiconductor layers having an energy bandgap wider than an energy bandgap of the first well layer. At least two layers of the plurality of semiconductor layers are adjacent to the first and second well layers, and have aluminum contents greater than that of the other layer.


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