The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 18, 2017
Filed:
Feb. 06, 2009
Zbigniew T. Kuznicki, Hoenheim, FR;
Patrick Meyrueis, Strasbourg, FR;
Zbigniew T. Kuznicki, Hoenheim, FR;
Patrick Meyrueis, Strasbourg, FR;
Volumion S.A.S, , FR;
Abstract
The present invention concerns methods for producing photovoltaic material and a device able to exploit high energy photons. The photovoltaic material is obtained from a conventional photovoltaic material having a top surface intended to be exposed to photonic radiation, having a built-in P-N junction delimiting an emitter part and a base part and comprising at least one area or region specifically designed, treated or adapted to absorb high energy or energetic photons, located adjacent or near at least one hetero-interface. According to the invention, this material is subjected to treatments resulting in the formation of at least one semiconductor based metamaterial field or region being created, as a transitional region of the or a hetero-interface, in an area located continuous or proximate to the or an absorption area or region for the energetic photons of the photonic radiation impacting said photovoltaic material.