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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9711668 B1

PDFFull Text
Date of Patent:
Jul. 18, 2017

Filed:

Apr. 01, 2013

Photovoltaic cell

Applicant:

Guala Technology Co., Ltd., Kobe, JP;

Inventor:

Akira Nakazawa, Kobe, JP;

Assignee:

GUALA TECHNOLOGY CO., LTD., Kobe, JP;

Attorney:

Oliff PLC

Primary Examiner:

Lindsey Bernier

Int. Cl.
CPC ...
H01L 31/00 (2006.01); H01L 31/042 (2014.01); H02N 6/00 (2006.01); H01L 31/0384 (2006.01); H01L 31/0352 (2006.01); H01L 31/0236 (2006.01); H01G 9/20 (2006.01); H01L 31/0392 (2006.01); H01M 14/00 (2006.01); H01L 31/0296 (2006.01); H01L 31/072 (2012.01); H01L 31/18 (2006.01); H01L 31/0224 (2006.01);
U.S. Cl.
CPC ...
H01L 31/0384 (2013.01); H01G 9/204 (2013.01); H01G 9/2027 (2013.01); H01G 9/2031 (2013.01); H01G 9/2036 (2013.01); H01L 31/0296 (2013.01); H01L 31/02366 (2013.01); H01L 31/0352 (2013.01); H01L 31/0392 (2013.01); H01L 31/072 (2013.01); H01L 31/1828 (2013.01); H01M 14/005 (2013.01); H01L 31/022425 (2013.01); H01L 31/022466 (2013.01); Y02E 10/50 (2013.01);
Abstract

A photovoltaic cell is provided that enables cost reduction and stable operation with a simple configuration and enhances conversion efficiency by a new technology of forming an energy level in a band gap. In the photovoltaic cell, a substrate, a conductive first electrode, an electromotive force layer, a p-type semiconductor layer, and a conductive second electrode are laminated, electromotive force is generated by photoexciting the electron in the band gap of the electromotive force layer by light irradiation, the electromotive force layer is filled with an n-type metal oxide semiconductor of fine particles coated by an insulating coat, a new energy level is formed in a band gap by photoexcited structural change caused by ultraviolet irradiation, and efficient and stable operation can be performed by providing a layer of an n-type metal oxide semiconductor between the first electrode and the electromotive force layer.

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