The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 18, 2017
Filed:
Oct. 05, 2015
Fuji Electric Co., Ltd., Kawasaki-shi, JP;
Taichi Karino, Matsumoto, JP;
Masaru Saito, Matsumoto, JP;
Masaharu Yamaji, Matsumoto, JP;
Osamu Sasaki, Azumino, JP;
FUJI ELECTRIC CO., LTD., Kawasaki-Shi, JP;
Abstract
A semiconductor device includes a first conductive type first main electrode region, a first conductive type drift region which makes contact with the first main electrode region, a first conductive type second main electrode region which makes contact with the drift region, a second conductive type well region which is provided in a part of a surface layer portion of the drift region and to which a reference potential is applied, and a first conductive type potential extracting region which is provided in a surface layer portion of the well region and to which the reference potential is applied. The well region serves as a base region which controls a current flowing between the potential extracting region and the drift region. Thus, it is possible to provide a novel semiconductor device which is high in reliability while the increase of the chip size can be suppressed.