The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 18, 2017
Filed:
Apr. 25, 2016
Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;
Shunpei Yamazaki, Setagaya, JP;
Masashi Tsubuku, Atsugi, JP;
Kengo Akimoto, Atsugi, JP;
Hiroki Ohara, Sagamihara, JP;
Tatsuya Honda, Nigata, JP;
Takatsugu Omata, Isehara, JP;
Yusuke Nonaka, Atsugi, JP;
Masahiro Takahashi, Atsugi, JP;
Akiharu Miyanaga, Tochigi, JP;
Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken, JP;
Abstract
A semiconductor device comprising a first metal oxide film, an oxide semiconductor film, a second metal oxide film, a gate insulating film, and a gate electrode is provided. The oxide semiconductor film comprises an In—Ga—Zn—O-based metal oxide. The second metal oxide film comprises a Ga—Zn—O-based metal oxide. An amount of substance of zinc oxide with respect to gallium oxide is lower than 50% in the Ga—Zn—O-based metal oxide.