The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 18, 2017
Filed:
Nov. 25, 2014
Denso Corporation, Kariya, Aichi-pref., JP;
Kazuhiro Oyama, Kariya, JP;
Toshiharu Makino, Tsukuba, JP;
Masahiko Ogura, Tsukuba, JP;
Hiromitsu Kato, Tsukuba, JP;
Daisuke Takeuchi, Tsukuba, JP;
Satoshi Yamasaki, Tsukuba, JP;
Norio Tokuda, Kanazawa, JP;
Takao Inokuma, Kanazawa, JP;
Takuma Minamiyama, Kanazawa, JP;
DENSO CORPORATION, Kariya, JP;
Abstract
A semiconductor device includes a MISFET having: a diamond substrate; a drift layer having a first layer with a first density for providing a hopping conduction and a second layer with a second density lower than the first density, and having a δ dope structure; a body layer on the drift layer; a source region in an upper portion of the body layer; a gate insulation film on a surface of the body layer; a gate electrode on a surface of the gate insulation film; a first electrode electrically connected to the source region and a channel region; and a second electrode electrically connected to the diamond substrate. The MISFET flows current in the drift layer in a vertical direction, and the current flows between the first electrode and the second electrode.