The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 18, 2017
Filed:
Aug. 11, 2015
Fuji Electric Co., Ltd., Kawasaki-shi, JP;
FUJI ELECTRIC CO., LTD., Kawasaki-Shi, JP;
Abstract
A semiconductor device has a reduced an on-voltage and uses a gate resistance to improve the trade-off relationship between turn-on loss Eon and dV/dt, and turn-on dV/dt controllability. A floating p-type region is provided in an n-type drift layer so as to be spaced from a p-type base region configuring a MOS gate structure. An emitter electrode and the floating p-type region are electrically connected by an n-type region provided in the surface layer of a substrate front surface. The n-type region is covered with a second insulating film which film is covered with an emitter electrode. By an electric field being generated in the n-type region by the emitter electrode provided on the top of the n-type region via the second interlayer insulating film, the n-type region forms a current path which causes holes accumulated in the floating p-type region to flow to the emitter electrode when turning on.