The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 18, 2017
Filed:
Feb. 05, 2016
Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;
Dae Sub Jung, Shanghai, CN;
Bo Liu, Shanghai, CN;
Abstract
A method for forming a power semiconductor device is provided. The method includes providing a substrate having a first surface and a second surface; and forming a plurality of trenches in the second surface of the substrate. The method also includes forming a semiconductor pillar in each of the plurality of trenches, wherein the semiconductor pillars and the substrate form a plurality of super junctions of the power semiconductor device for increasing the breakdown voltage of the power semiconductor device and reducing the on-stage voltage of the power semiconductor device; and forming a gate structure on the first surface of the substrate. Further, the method includes forming a plurality of well regions in the first surface of the substrate around the gate structure; and forming a source region in each of the plurality of well regions around the gate structure.