The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 18, 2017
Filed:
Feb. 22, 2016
Applicant:
Boe Technology Group Co., Ltd., Beijing, CN;
Inventors:
Liangjian Li, Beijing, CN;
Yueping Zuo, Beijing, CN;
Yinghai Ma, Beijing, CN;
Xiaowei Xu, Beijing, CN;
Assignee:
BOE TECHNOLOGY GROUP CO., LTD., Chaoyang District, Beijing, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/12 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01); H01L 27/12 (2006.01); H01L 29/06 (2006.01); H01L 29/786 (2006.01); H01L 23/535 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/41733 (2013.01); H01L 23/535 (2013.01); H01L 27/124 (2013.01); H01L 27/1222 (2013.01); H01L 27/1248 (2013.01); H01L 27/1288 (2013.01); H01L 29/0649 (2013.01); H01L 29/42384 (2013.01); H01L 29/6675 (2013.01); H01L 29/78684 (2013.01);
Abstract
The present application discloses a thin film transistor comprising active layer on a base substrate; an insulating layer over the active layer, the insulating layer comprising a source via and a drain via, each of which extending through the insulating layer; a source electrode within the source via in contact with the active layer; and a drain electrode within the drain via in contact with the active layer.