The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 18, 2017
Filed:
May. 15, 2015
Samsung Display Co., Ltd., Yongin, Gyeonggi-Do, KR;
Seunghwan Cho, Yongin, KR;
Dohyun Kwon, Yongin, KR;
Donghwan Shim, Yongin, KR;
Suyeon Sim, Yongin, KR;
Minjung Lee, Yongin, KR;
Sungeun Lee, Yongin, KR;
Iljeong Lee, Yongin, KR;
Jungkyu Lee, Yongin, KR;
Samsung Display Co., Ltd., Gyeonggi-do, KR;
Abstract
A thin film transistor (TFT) circuit panel comprises a substrate and first and second patterned multi-layer structures formed over the substrate. The first patterned multi-layer structure is to provide a driving TFT and a storage capacitor, and comprises: a semiconductor layer, a first electrode over the semiconductor layer, a second electrode disposed over the first electrode and insulated from the first electrode, a storage insulating layer disposed between the first electrode and the second electrode, and a driving gate insulating layer disposed between the semiconductor layer and the first electrode. The second patterned multi-layer structure is spaced from the first multi-layer structure, and comprises: a lower patterned insulating layer, a patterned conductive layer and a top patterned insulating layer. An organic insulating material is filled between the first and second patterned multi-layer structures.