The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 18, 2017
Filed:
Aug. 06, 2015
Applicant:
Infineon Technologies Dresden Gmbh, Dresden, DE;
Inventors:
Assignee:
INFINEON TECHNOLOGIES DRESDEN GMBH, Dresden, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 21/764 (2006.01); H01L 21/762 (2006.01); H01L 27/12 (2006.01); H01L 21/324 (2006.01); H01L 29/78 (2006.01); B81C 1/00 (2006.01);
U.S. Cl.
CPC ...
H01L 21/764 (2013.01); B81C 1/00047 (2013.01); H01L 21/3247 (2013.01); H01L 21/7624 (2013.01); H01L 27/1203 (2013.01); H01L 29/0649 (2013.01); H01L 29/0653 (2013.01); H01L 29/7833 (2013.01); B81B 2203/0315 (2013.01); B81C 2201/0116 (2013.01);
Abstract
In accordance with an embodiment of the present invention, a method of forming a semiconductor device includes forming a first cavity within a substrate. The first cavity is disposed under a portion of the substrate. The method further includes forming a first pillar within the first cavity to support the portion of the substrate.