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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9711378 B1

PDFFull Text
Date of Patent:
Jul. 18, 2017

Filed:

Nov. 28, 2014

Liquid epoxy resin composition for semiconductor sealing and resin-sealed semiconductor device

Applicant:

Shin-etsu Chemical Co., Ltd., Tokyo, JP;

Inventors:

Kazuaki Sumita, Annaka, JP;

Tatsuya Uehara, Annaka, JP;

Naoyuki Kushihara, Annaka, JP;

Assignee:

SHIN-ETSU CHEMICAL CO., LTD., Tokyo, JP;

Attorney:

Birch, Stewart, Kolasch & Birch, LLP

Primary Examiner:

Brook Kebede

Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/56 (2006.01); C08G 59/42 (2006.01); C08K 9/06 (2006.01); H01L 23/29 (2006.01); C09D 7/12 (2006.01); C09D 163/00 (2006.01); H01L 21/78 (2006.01); C08G 59/24 (2006.01); C08G 59/32 (2006.01); C08G 59/68 (2006.01); C08K 5/09 (2006.01);
U.S. Cl.
CPC ...
H01L 21/561 (2013.01); C08G 59/245 (2013.01); C08G 59/3218 (2013.01); C08G 59/3227 (2013.01); C08G 59/3281 (2013.01); C08G 59/42 (2013.01); C08G 59/686 (2013.01); C08K 9/06 (2013.01); C09D 7/1225 (2013.01); C09D 7/1233 (2013.01); C09D 163/00 (2013.01); H01L 21/78 (2013.01); H01L 23/296 (2013.01); C08K 5/09 (2013.01); C08K 2201/003 (2013.01); H01L 2924/0002 (2013.01);
Abstract

The present invention relates to a liquid epoxy resin composition for semiconductor sealing, which contains: (A) a liquid epoxy resin that does not contain a siloxane bond in each molecule; (B) an acid anhydride-based curing agent; (C) a surface-treated spherical inorganic filler which is a spherical inorganic filler having an average particle diameter of 0.1-10 μm as determined by a laser diffraction method and serving as an inorganic filler, and wherein the surface of the spherical inorganic filler is surface-treated with 0.5-2.0 parts by weight of a (meth)acrylic functional silane coupling agent per 100 parts by weight of the spherical inorganic filler of the component (C); and (D) a curing accelerator. The present invention is able to provide a semiconductor device which has excellent heat resistance and moisture resistance.

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