The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 18, 2017
Filed:
Dec. 19, 2014
Seoul Viosys Co., Ltd., Ansan-si, KR;
Jong Min Jang, Ansan-si, KR;
Hee Sub Lee, Ansan-si, KR;
Won Young Roh, Ansan-si, KR;
Jong Hyeon Chae, Ansan-si, KR;
Joon Sup Lee, Ansan-si, KR;
Daewoong Suh, Ansan-si, KR;
Hyun A Kim, Ansan-si, KR;
Seon Min Bae, Ansan-si, KR;
SEOUL VIOSYS CO., LTD., Ansan-si, KR;
Abstract
A template for growing a semiconductor, a method of separating a growth substrate and a method of fabricating a light emitting device using the same are disclosed. The template for growing a semiconductor includes a growth substrate including a nitride substrate; a seed layer disposed on the growth substrate and including at least one trench; and a growth stop layer disposed on a bottom surface of the trench, wherein the trench includes an upper trench and a lower trench, and the upper trench has a smaller width than the lower trench.