The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 18, 2017
Filed:
Jan. 22, 2016
Applicant:
Panasonic Corporation, Osaka, JP;
Inventor:
Chiaki Kudou, Toyama, JP;
Assignee:
PANASONIC CORPORATION, Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C23C 16/32 (2006.01); C23C 16/455 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0262 (2013.01); C23C 16/325 (2013.01); C23C 16/455 (2013.01); C23C 16/4557 (2013.01); C23C 16/45512 (2013.01); H01L 21/02378 (2013.01); H01L 21/02529 (2013.01); H01L 21/02579 (2013.01);
Abstract
An aspect of the present disclosure resides in a method for manufacturing a compound semiconductor epitaxial substrate including a substrate and a compound semiconductor epitaxial layer disposed on the substrate, the method including providing the substrate, heating a carrier gas, preparing a mixed gas by mixing the heated carrier gas with at least a portion of a source gas that is a source for the compound semiconductor epitaxial layer, the source gas having a lower temperature than the heated carrier gas, and forming the compound semiconductor epitaxial layer on the substrate by supplying the mixed gas onto the substrate.