The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 11, 2017
Filed:
Feb. 19, 2016
Nichia Corporation, Anan-shi, Tokushima, JP;
Susumu Harada, Naruto, JP;
NICHIA CORPORATION, Anan-shi, JP;
Abstract
With a method for manufacturing a semiconductor device, a semiconductor layer having a protrusion on a main face is formed. The protrusion includes an upper face and side faces. A conductive layer on a region that includes at least the upper face and the side faces of the protrusion is formed. A first mask that partially covers a surface of the conductive layer is formed. A part of the conductive layer is etched by using the first mask in a first etching process. A second mask that at least partially covers the surface of the conductive layer that has undergone the first etching process is formed. A part of the conductive layer is etched by using the second mask to expose a part of the semiconductor layer and to form the conductive layer into an electrode in a second etching process.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile