The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 11, 2017

Filed:

Jun. 15, 2010
Applicants:

Seamus Curran, Pearland, TX (US);

Sampath Dias, Houston, TX (US);

Nigel Alley, Houston, TX (US);

Amrita Haldar, Houston, TX (US);

Soniya Devi Yambem, Houston, TX (US);

Liao Kang-shyang, Houston, TX (US);

Prajakta Chaudhari, Houston, TX (US);

Inventors:

Seamus Curran, Pearland, TX (US);

Sampath Dias, Houston, TX (US);

Nigel Alley, Houston, TX (US);

Amrita Haldar, Houston, TX (US);

Soniya Devi Yambem, Houston, TX (US);

Liao Kang-Shyang, Houston, TX (US);

Prajakta Chaudhari, Houston, TX (US);

Assignee:

UNIVERSITY OF HOUSTON, Houston, TX (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/00 (2006.01); H01L 51/52 (2006.01); B82Y 10/00 (2011.01); H01G 9/20 (2006.01); H01L 51/42 (2006.01); H01L 51/00 (2006.01);
U.S. Cl.
CPC ...
H01L 51/52 (2013.01); B82Y 10/00 (2013.01); H01G 9/2086 (2013.01); H01L 51/426 (2013.01); H01L 51/0036 (2013.01); H01L 51/0047 (2013.01); Y02E 10/542 (2013.01); Y02E 10/549 (2013.01); Y02P 70/521 (2015.11);
Abstract

In various embodiments, optoelectronic devices are described herein. The optoelectronic device may include an optoelectronic cell arranged so as to wrap around a central axis wherein the cell includes a first conductive layer, a semi-conductive layer disposed over and in electrical communication with the first conductive layer, and a second conductive layer disposed over and in electrical communication with the semi-conductive layer. In various embodiments, methods for making optoelectronic devices are described herein. The methods may include forming an optoelectronic cell while flat and wrapping the optoelectronic cell around a central axis. The optoelectronic devices may be photovoltaic devices. Alternatively, the optoelectronic devices may be organic light emitting diodes.


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