The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 11, 2017
Filed:
Apr. 15, 2014
Applicant:
Novaled Gmbh, Dresden, DE;
Inventors:
Hans Kleemann, Dresden, DE;
Bjoern Luessem, Dresden, DE;
Karl Leo, Dresden, DE;
Alrun Guenther, Dresden, DE;
Assignee:
Novaled GmbH, Dresden, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 35/24 (2006.01); H01L 51/05 (2006.01); H01L 51/00 (2006.01); H01L 51/10 (2006.01); H01L 51/52 (2006.01);
U.S. Cl.
CPC ...
H01L 51/057 (2013.01); H01L 51/002 (2013.01); H01L 51/105 (2013.01); H01L 51/5296 (2013.01); H01L 51/0018 (2013.01);
Abstract
The disclosure relates to a method for producing an organic field effect transistor, including providing a gate electrode and a gate insulator, depositing a first organic semiconducting layer on the gate insulator, generating a first electrode and an electrode insulator assigned to the first electrode for electrical insulation, depositing a second organic semiconducting layer on the first organic semiconducting layer and the electrode insulator, and generating a second electrode. Furthermore, an organic field effect transistor is provided.