The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 11, 2017
Filed:
Aug. 31, 2015
International Business Machines Corporation, Armonk, NY (US);
Anthony J. Annunziata, Stamford, CT (US);
Armand A. Galan, New York, NY (US);
Steve Holmes, Ossining, NY (US);
Eric A. Joseph, White Plains, NY (US);
Gen P. Lauer, Yorktown Heights, NY (US);
Qinghuang Lin, Yorktown Heights, NY (US);
Nathan P. Marchack, White Plains, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method for forming a memory device includes masking a photoresist material using a reticle and a developer having a polarity opposite that of the photoresist to provide an island of photoresist material. A planarizing layer is etched to establish a pillar of planarizing material defined by the island of photoresist material. A metal layer is etched to form a metal pillar having a diameter about the same as the pillar of planarizing material. A memory stack is etched to form a memory stack pillar having a diameter about the same as the metal pillar. A magnetoresistive memory cell includes a magnetic tunnel junction pillar having a circular cross section. The pillar has a pinned magnetic layer, a tunnel barrier layer, and a free magnetic layer. A first conductive contact is disposed above the magnetic tunnel junction pillar. A second conductive contact is disposed below the magnetic tunnel junction pillar.