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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9705070 B1

PDFFull Text
Date of Patent:
Jul. 11, 2017

Filed:

Oct. 26, 2011

Ferroelectric thin film, method of manufacturing same and method of manufacturing piezoelectric element

Applicant:

Kenji Mawatari, Ibaraki, JP;

Inventor:

Kenji Mawatari, Ibaraki, JP;

Assignee:

KONICA MINOLTA, INC., Tokyo, JP;

Attorney:

Cozen O'Connor

Primary Examiner:

David Sample

Int. Cl.
CPC ...
H01L 41/187 (2006.01); H01L 41/316 (2013.01); G01J 5/34 (2006.01); H03H 3/00 (2006.01); C23C 14/08 (2006.01); C23C 14/35 (2006.01); C04B 35/491 (2006.01); H03H 3/02 (2006.01); H03H 9/02 (2006.01); H01L 41/08 (2006.01); B41J 2/16 (2006.01);
U.S. Cl.
CPC ...
H01L 41/1876 (2013.01); C04B 35/491 (2013.01); C23C 14/088 (2013.01); C23C 14/35 (2013.01); G01J 5/34 (2013.01); H01L 41/0805 (2013.01); H01L 41/316 (2013.01); H03H 3/00 (2013.01); H03H 3/02 (2013.01); H03H 9/02031 (2013.01); B41J 2/1646 (2013.01); C04B 2235/3213 (2013.01); C04B 2235/3224 (2013.01); C04B 2235/3227 (2013.01); C04B 2235/3251 (2013.01); C04B 2235/3258 (2013.01); C04B 2235/3294 (2013.01); C04B 2235/3298 (2013.01); C04B 2235/768 (2013.01); Y10T 428/265 (2015.01);
Abstract

In order to obtain a ferroelectric thin film that is formed to have a predetermined thickness on a substrate, that have satisfactory crystallization and that achieves a high piezoelectric property, a method of manufacturing such a ferroelectric thin film and a method of manufacturing a piezoelectric element having such a ferroelectric thin film, when a dielectric material of a perovskite structure is formed into a film on the substrate, a predetermined amount of additive is mixed with PZT, and the concentration of the additive mixed is varied in the thickness direction of the thin film.

Find Patent Forward Citations

Mawatari, Kenji. (2017). Ferroelectric thin film, method of manufacturing same and method of manufacturing piezoelectric element (U.S. Patent No. 9705070). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9705070

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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