The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 11, 2017

Filed:

Aug. 27, 2013
Applicant:

Osram Opto Semiconductors Gmbh, Regensburg, DE;

Inventors:

Roland Enzmann, Regensburg, DE;

Stephan Haneder, Regensburg, DE;

Tomasz Swietlik, Regensburg, DE;

Christoph Walter, Regensburg, DE;

Andreas Rozynski, Regensburg, DE;

Markus Graul, Wilhelmsdorf, DE;

Karsten Auen, Regensburg, DE;

Jürgen Dachs, Baar-Ebenhausen, DE;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/022 (2006.01); H01L 33/60 (2010.01); H01S 5/028 (2006.01); H01L 33/00 (2010.01); H01L 33/48 (2010.01); H01L 33/62 (2010.01); H01S 5/02 (2006.01);
U.S. Cl.
CPC ...
H01L 33/60 (2013.01); H01L 33/005 (2013.01); H01L 33/48 (2013.01); H01L 33/62 (2013.01); H01S 5/028 (2013.01); H01S 5/02252 (2013.01); H01S 5/02268 (2013.01); H01L 2933/0033 (2013.01); H01L 2933/0058 (2013.01); H01L 2933/0066 (2013.01); H01S 5/0201 (2013.01); H01S 5/0217 (2013.01);
Abstract

In a method for producing a laser diode, a number of laser diodes are produced on a wafer. The wafer is broken down into wafer pieces, each wafer piece having a plurality of laser diodes being arranged side by side. One wafer piece is inserted into a first mount that includes a first covering element overlapping a front face of the wafer piece and shadowing a bottom area of the front face of the wafer piece. A minor layer is deposited on an unshadowed upper area of the wafer piece's front face. The wafer piece is inserted into a second mount, which includes a second covering element that shadows the minor layer of the upper area of the front face. An electrically conductive contact layer is deposited on an unshadowed bottom area of the wafer piece's front face. The wafer piece is subsequently broken down into individual laser diodes.


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