The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 11, 2017

Filed:

Oct. 28, 2015
Applicant:

Playnitride Inc., Tainan, TW;

Inventors:

Yun-Li Li, Tainan, TW;

Po-Jen Su, Tainan, TW;

Hsuan-Wei Mai, Tainan, TW;

Assignee:

PlayNitride Inc., Tainan, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/50 (2010.01); H01L 33/44 (2010.01); H01L 33/62 (2010.01); H01L 33/38 (2010.01);
U.S. Cl.
CPC ...
H01L 33/505 (2013.01); H01L 33/504 (2013.01); H01L 33/382 (2013.01); H01L 33/44 (2013.01); H01L 33/62 (2013.01);
Abstract

A light emitting device includes an epitaxial structure and a sheet-shaped wavelength converting layer. The sheet-shaped wavelength converting layer is disposed on the epitaxial structure and at least includes a first wavelength converting unit layer and a second wavelength converting unit layer. The first wavelength converting unit layer is disposed between the second wavelength converting unit layer and the epitaxial structure. An emission peak wavelength of the first wavelength converting unit layer is greater than an emission peak wavelength of the second wavelength converting unit layer. A full width half magnitude of the second wavelength converting unit layer is greater than a full width half magnitude of the first wavelength converting unit layer.


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