The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 11, 2017

Filed:

Jul. 13, 2015
Applicant:

Quora Technology, Inc., Los Gatos, CA (US);

Inventors:

Vladimir Odnoblyudov, Eagle, ID (US);

Martin F. Schubert, Boise, ID (US);

Assignee:

Quora Technology, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/32 (2010.01); H01L 33/00 (2010.01); H01L 33/06 (2010.01); H01L 33/24 (2010.01); H01L 29/205 (2006.01); H01L 21/762 (2006.01); H01L 21/683 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 33/32 (2013.01); H01L 21/6835 (2013.01); H01L 21/76254 (2013.01); H01L 29/205 (2013.01); H01L 33/0079 (2013.01); H01L 33/24 (2013.01); H01L 29/2003 (2013.01); H01L 33/06 (2013.01); H01L 2221/6835 (2013.01); H01L 2221/68368 (2013.01); H01L 2221/68381 (2013.01);
Abstract

Engineered substrates having epitaxial templates for forming epitaxial semiconductor materials and associated systems and methods are disclosed herein. In several embodiments, for example, an engineered substrate can be manufactured by forming a first semiconductor material at a front surface of a donor substrate. The first semiconductor material is transferred to first handle substrate to define a first formation structure. A second formation structure is formed to further include a second semiconductor material homoepitaxial to the first formation structure. The method can further include transferring the first portion of the second formation structure to a second handle substrate such that a second portion of the second formation structure remains at the first handle substrate.


Find Patent Forward Citations

Loading…