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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9705034 B1

PDFFull Text
Date of Patent:
Jul. 11, 2017

Filed:

Oct. 02, 2012

Light-emitting diode, method for manufacturing light-emitting diode, light-emitting diode lamp and illumination device

Applicant:

Showa Denko K.k., Minato-ku, Tokyo, JP;

Inventors:

Atsushi Matsumura, Chichibu, JP;

Yuu Tokunaga, Chichibu, JP;

Assignee:

SHOWA DENKO K.K., Tokyo, JP;

Attorney:

Sughrue Mion, PLLC

Primary Examiner:

Kimberly Rizkallah

Assistant Examiner:

Brian Turner

Int. Cl.
CPC ...
H01L 33/46 (2010.01); H01L 33/60 (2010.01); H01L 33/42 (2010.01); H01L 33/36 (2010.01); H01L 33/14 (2010.01); H01L 33/38 (2010.01); H01L 33/00 (2010.01); H01L 33/40 (2010.01); H01L 33/44 (2010.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 33/145 (2013.01); H01L 33/0066 (2013.01); H01L 33/36 (2013.01); H01L 33/38 (2013.01); H01L 21/0262 (2013.01); H01L 21/02395 (2013.01); H01L 21/02461 (2013.01); H01L 21/02463 (2013.01); H01L 21/02543 (2013.01); H01L 21/02546 (2013.01); H01L 21/02576 (2013.01); H01L 21/02579 (2013.01); H01L 33/0079 (2013.01); H01L 33/387 (2013.01); H01L 33/405 (2013.01); H01L 33/44 (2013.01);
Abstract

A light-emitting diode, a method of manufacturing the same, a lamp and an illumination device. A light-emitting diode () is provided with a compound semiconductor layer () including a light-emitting layer () provided on a substrate (); an ohmic contact electrode () provided between the substrate and compound semiconductor layer; an ohmic electrode () provided on the side of the compound semiconductor layer opposite the substrate; a surface electrode () including a branch section () provided so as to cover the surface of the ohmic electrode and a pad section () coupled to the branch section; and a current-blocking portion () provided between an under-pad light-emitting layer () arranged in an area of the light-emitting layer that overlaps the pad section () and a light-emitting layer arranged in an area except the area that overlaps the pad section, to prevent current from being supplied to the under-pad light-emitting layer.

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