The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 11, 2017
Filed:
Oct. 02, 2013
Applicant:
Intellec Limited, Plymouth, GB;
Inventors:
Menno Kappers, Cambridge, GB;
Dandan Zhu, Cambridge, GB;
Assignee:
Intellec Limited, Plymouth, GB;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/033 (2006.01); H01L 33/12 (2010.01); H01L 33/16 (2010.01); H01L 31/0304 (2006.01); H01L 31/0384 (2006.01); H01L 33/06 (2010.01); H01L 21/02 (2006.01); H01L 31/0352 (2006.01); H01L 31/18 (2006.01); H01L 33/00 (2010.01); H01L 33/32 (2010.01);
U.S. Cl.
CPC ...
H01L 33/06 (2013.01); H01L 21/0251 (2013.01); H01L 21/0254 (2013.01); H01L 21/0262 (2013.01); H01L 21/02381 (2013.01); H01L 21/02458 (2013.01); H01L 21/02505 (2013.01); H01L 21/02513 (2013.01); H01L 31/03044 (2013.01); H01L 31/03048 (2013.01); H01L 31/035236 (2013.01); H01L 31/1848 (2013.01); H01L 31/1852 (2013.01); H01L 33/007 (2013.01); H01L 33/0025 (2013.01); H01L 33/32 (2013.01);
Abstract
A semiconductor wafer comprising a substrate; a first AlGaN layer on the substrate; a second AlGaN layer on the first AlGaN layer; a GaN layer on the second AlGaN layer; and a plurality of crystalline GaN islands between the first and second AlGaN layers.