The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 11, 2017
Filed:
Jan. 28, 2016
Infineon Technologies Ag, Neubiberg, DE;
Joost Willemen, Munich, DE;
Michael Mayerhofer, Taufkirchen, DE;
Ulrich Glaser, Putzbrunn, DE;
Yiqun Cao, Munich, DE;
Andreas Meiser, Sauerlach, DE;
Magnus-Maria Hell, Munich, DE;
Matthias Stecher, Munich, DE;
Julien Lebon, Munich, DE;
Infineon Technologies AG, Neubiberg, DE;
Abstract
A method of triggering avalanche breakdown in a semiconductor device includes providing an electrical coupling and an optical coupling between an auxiliary semiconductor device configured to emit radiation and the semiconductor device including a pn junction between a first layer of a first conductivity type buried below a surface of a semiconductor body and a doped semiconductor region of a second conductivity type disposed between the surface and the first layer. The electrical and optical coupling includes triggering emission of radiation by the auxiliary semiconductor device and triggering avalanche breakdown in the semiconductor device by absorption of the radiation in the semiconductor device.