The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 11, 2017

Filed:

Jan. 26, 2016
Applicant:

Boe Technology Group Co., Ltd., Beijing, CN;

Inventors:

Feng Jiang, Beijing, CN;

Xingdong Liu, Beijing, CN;

Chungchun Lee, Beijing, CN;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/102 (2006.01); H01L 21/00 (2006.01); H01L 31/117 (2006.01); H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
H01L 31/117 (2013.01); H01L 27/14623 (2013.01); H01L 27/14632 (2013.01); H01L 27/14658 (2013.01); H01L 27/14669 (2013.01); H01L 27/14676 (2013.01);
Abstract

The present invention provides an invisible light flat plate detector and a manufacturing method thereof, an imaging apparatus, relates to the field of detection technology, can solve problems that the structure of the invisible light flat plate detector in the prior art is complex and the manufacturing method thereof is tedious. The invisible light flat plate detector of the present invention comprises a plurality of detection units and an invisible light conversion layer provided above the detection units for converting invisible light into visible light, each of the detection units comprising a thin film transistor provided on a substrate, and a first insulation layer, a first electrode, a semiconductor photoelectronic conversion module, a second electrode which are successively provided above the thin film transistor and of which projections on the substrate at least partially overlap with a projection of the thin film transistor on the substrate.


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