The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 11, 2017
Filed:
Aug. 11, 2016
Applicant:
Huawei Technologies Co., Ltd., Shenzhen, CN;
Inventors:
Assignee:
Huawei Technologies Co., Ltd., Shenzhen, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/107 (2006.01); H01L 31/18 (2006.01); G02B 6/122 (2006.01); G02B 6/13 (2006.01); H01L 31/0224 (2006.01); H01L 31/0232 (2014.01); H01L 31/028 (2006.01); G02B 6/12 (2006.01);
U.S. Cl.
CPC ...
H01L 31/1075 (2013.01); G02B 6/1228 (2013.01); G02B 6/131 (2013.01); H01L 31/028 (2013.01); H01L 31/02327 (2013.01); H01L 31/022408 (2013.01); H01L 31/107 (2013.01); H01L 31/18 (2013.01); H01L 31/1804 (2013.01); G02B 2006/12061 (2013.01);
Abstract
An avalanche photodiode includes a GeOI substrate; an I—Ge absorption layer configured to absorb an optical signal and generate a photo-generated carrier; a first p-type SiGe layer, a second p-type SiGe layer, a first SiGe layer, and a second SiGe layer, where a Si content in any one of the SiGe layers is less than or equal to 20%; a first SiOoxidation layer and a second SiOoxidation layer; a first taper type silicon Si waveguide layer and a second taper type silicon Si waveguide layer; a heavily-doped n-type silicon Si multiplication layer; and anode electrodes and a cathode electrode.