The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 11, 2017
Filed:
Nov. 20, 2013
Kabushiki Kaisha Toshiba, Minato-ku, Tokyo, JP;
Naoyuki Nakagawa, Tokyo, JP;
Soichiro Shibasaki, Tokyo, JP;
Hiroki Hiraga, Kanagawa, JP;
Mutsuki Yamazaki, Kanagawa, JP;
Kazushige Yamamoto, Kanagawa, JP;
Shinya Sakurada, Tokyo, JP;
Michihiko Inaba, Kanagawa, JP;
KABUSHIKI KAISHA TOSHIBA, Tokyo, JP;
Abstract
A photoelectric conversion element of an embodiment includes: a back electrode; a heterojunction-type light absorbing layer on the back electrode, containing Cu, selected from Al, In and Ga, and selected from Se and S, and having a chalcopyrite structure; a transparent electrode on the light absorbing layer, wherein aback electrode side-part of the light absorbing layer is of p-type, and a transparent electrode-side part of the light absorbing layer is of n-type, the light absorbing layer has a part with an average crystal grain size of 1,000 nm to 3,000 nm in the vicinity of the back electrode, and the light absorbing layer has apart with an average crystal grain size of at most 500 nm in the vicinity of the transparent electrode or the light absorbing layer has an amorphous part in the vicinity of the transparent electrode.