The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 11, 2017
Filed:
Sep. 04, 2013
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Norihisa Arai, Saitama-ken, JP;
Tsutomu Takahashi, Kanagawa-ken, JP;
Kazunori Masuda, Kanagawa-ken, JP;
Kazuo Hatakeyama, Tokyo, JP;
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Abstract
According to one embodiment, a semiconductor device includes: a semiconductor layer of a first conductivity type, and the semiconductor layer having a first and a second surfaces; a first conductive layer penetrating from the first surface side to the second surface side of the semiconductor layer; a first semiconductor region of a first conductivity type surrounding part of the first conductive layer on the second surface side of the semiconductor layer, a portion other than a front surface of the first semiconductor region being surrounded by the semiconductor layer; and a first insulating film provided between the first conductive layer and the semiconductor layer and between the first conductive layer and the first semiconductor region, a concentration of an impurity element contained in the first semiconductor region being higher than a concentration of an impurity element contained in the semiconductor layer.